1998-11~2000-01,美国国家标准与技术研究院, 高级访问学者
1993-04~现在, 中国科学院上海技术物理研究所, 课题组长、室主任、副所长、党委书记
1989-09~1993-03,中国科学院上海技术物理研究所, 理学博士
1986-09~1989-07,中国科学院上海技术物理研究所, 理学硕士
1981-09~1986-07,中国科学技术大学, 理学学士

• 航天红外探测器

• 紫外焦平面等新型探测组件及其抗辐射机理与可靠性

1. Deng HH, Tang HJ, Li, T; Li X, Wei P, Zhu YM, Gong HM*. (2012) The Temperature-dependent Photoresponse Uniformity of an InGaAs Subpixels Infrared Detector by the LBIC Technique. Semiconductor Science and Technology 27: 115018.

2. Gong HM, Tang HJ, Li X, Zhang KF, Li YF, Li T, Ning JH, Wang Y, Miao GQ, Song H, Zhang YG, Fang JX.(2009) Near-infrared InGaAs FPAs for Space Applications. Infrared and Laser Engineering 38(4): 574-582.

3. Zhang KF, Tang HJ, Wu XL, Li YF, Li T, Li X, Gong HM*. (2009) Effects of an Anodic Oxide Passivation Layer on Mesa-type InGaAs(PIN) Photodetectors. Semiconductor Science and Technology 24: 015008.

4. Tang HJ, Wu XL, Xu QF, Liu HY, Zhang KF, Wang Y, He XR, Li X, Gong HM*. (2008) Effect of Sulfur Passivation on the InP Surface Prior to Plasma-enhanced Chemical Vapor Deposition of SiNx. Semiconductor Science and Technology 23(3):1-5.

5. Tang HJ, Wu XL, Zhang KF, Li YF, Ning JH, Wang Y, Li X, Gong HM*.(2008) The Defect Density of a SiNx/In0.53Ga0.47As Interface Passivated Using (NH4)2Sx, Applied Physics A 91: 651-655.