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Xiangyang Li
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Affiliation: Shanghai Institute of Technical Physics of the Chinese Academy of Science, CAS
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  • Photoelectric device


1. Optical Characterization of GaN/AlGaN Multifilms by Transmission and Reflection Spectra Journal of Applied Physics Vol.108, 063104（2010）.

2. Effects of the intrinsic layer width on the band-to-band tunneling current in p-i-n GaN-based avalanche photodiodes Semicond. Sci. Technol. v. 24, No.9（2009）.

3. AlGaN-based material characterizations and recent development of related solar-blind ultraviolet detectors SPIE 7518（2009）.

4. Development of solar-blind AlGaN 128×128 Ultraviolet Focal Plane Arrays, 中国科学E vol.6 no.51（2008）.

5. Polarization-sensitive Nanowire photodetectors Based on solution- synthesized CdSe quantum-wire solids Nano Letter vol.7no.10.