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Qian Gong
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Homepage: http://people.ucas.ac.cn/~0006068
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Affiliation: Shanghai Institute of Microsystem And Information Technology
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  • Semiconductor lasers

  • Low-dimensional semiconductor materials and devices

  • Semiconductor materials by Molecular-beam epitaxy


1.Peng Wang, Qimiao Chen, Xiaoyan Wu, Chunfang Cao, Shumin Wang, and Qian Gong, 'Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure', Nanoscale Research Letters 11, 119(2016).

2.J. Y. Yan, Q. Gong, J. J. Gao, C. F. Cao, Y. Wang, H. X. Xu, W. P. Zhao, H. L. Wang, “Analysis of mode-hop free tuning of folded cavity grating feedback lasers”, Appl. Opt. 54, 8339(2015).

3.Q. M. Chen, Y. Song, K. Wang, L. Yue, P. Lu, Y. Li, Q. Gong, and S. Wang, “A new route toward light emission from Ge: tensile-strained quantum dots,” Nanoscale 7, 8725(2015).

4.S. M. Wang, Q. Gong, Y. Y. Li, C. F. Cao, H. F. Zhou, J. Y. Yan, Q. B. Liu, L. Y. Zhang, G. Q. Ding, Z. F. Di, and X. M. Xie, 'A novel semiconductor compatible path for nano-graphene synthesis using CBr4 precursor and Ga catalyst', Scientific Reports 4, 4653(2014)

5.P. Chen, Q. Gong, C. F. Cao, S. G. Li, Y. Wang, Q. B. Liu, L. Yue, Y. G. Zhang, S. L. Feng, C. H. Ma and H. L. Wang, “High performance external cavity InAs/InP quantum dot lasers”, Appl. Phys. Lett. 98, 121102(2011).

6.Q. Gong, P. Chen, S. G. Li, Y. F. Lao, C. F. Cao, C. F. Xu, Y. G. Zhang, S. L. Feng, C. H. Ma, and H. L. Wang, “Quantum dot lasers grown by gas-source molecular-beam epitaxy”, J. Cryst. Growth 323, 450(2011).

7.S. G. Li, Q. Gong, Y. F. Lao, Y. G. Zhang, S. L. Feng, and H. L. Wang, “InAs/InP(100) quantum dot laser with high wavelength stability”, Electron. Lett. 46, 158(2010).

8.S. G. Li, Q. Gong, Y. F. Lao, H. D. Yang, S. Gao, P. Chen, Y. G. Zhang, S. L. Feng, and H. L. Wang, “Two-color quantum dot laser with tunable wavelength gap”, Appl. Phys. Lett. 95, 251111(2009).

9.S. G. Li, Q. Gong, Y. F. Lao, K. He, J. Li, Y. G. Zhang, S. L. Feng, and H. L. Wang, “Room temperature continuous-wave operation of InAs/InP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy, Appl. Phys. Lett. 93, 111109(2008).

10.Q. Gong, P. Offermans, R. Noetzel, P.M. Koenraad, and J. H. Wolter, “Capping process of the InAs/GaAs quantum dots studied by cross-sectional scanning tunneling microscopy”, Appl. Phys. Lett. 85, 5697(2004).

11.Q. Gong, R. Noetzel, P.J. van Veldhoven, T. J. Ejkemans, and J. H. Wolter, “InAs/InP quantum dots emitting in the 1.55 um wavelength region by inserting submonolayer GaP interlayers”, Appl. Phys. Lett. 85, 1404 (2004). 

12.Q. Gong, R. Noetzel, P. J. van Veldhoven, T. J. Ejkemans, and J. H. Wolter, “Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy”, Appl. Phys. Lett. 84, 275(2004). 

13.Q. Gong, R. Noetzel, G. J. Hamhuis, T. J. Ejkemans, and J. H. Wolter, “Self-organized strain engineering on GaAs (311)B: Template formaton for quantum dot nucleation control”, Appl. Phys. Lett. 81, 3254(2002).

14.Q. Gong, R. Noetzel, G. J. Hamhuis, T. J. Ejkemans, and J. H. Wolter, “Leveling and rebuilding: An approach to improve the uniformity of (In,Ga)As quantum dots”, Appl. Phys. Lett. 81, 1887(2002). 

15.Q. Gong, R. Noetzel, H.-P. Schoenherr, and K. H. Ploog, “Stable nonplanar surface formed on patterned (311)A GaAs substrate by molecular-beam epitaxy”, Appl. Phys. Lett. 77, 3538(2000). 

16.Q. Gong, J. B. Liang, et. al., “Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy”, J. Cryst. Growth 192, 376(1998).