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Jianxin Chen
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Homepage: http://bkjy.ucas.ac.cn/index.php/szdw/ds/dzxx/2572-cjx
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Affiliation: Shanghai Institute of Technical Physics of the Chinese Academy of Science,CAS
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  • Semiconductor Optoelectronics

  • Low-dimensional semiconductor materials by molecular beam epitaxy

  • Quantum structure optoelectronic devices


1. Studies on InAs/GaSb Superlattice Structural Properties by High Resolution X-ray Diffraction, Zhou Yi, Chen Jianxin, Xu Qingqing, and He Li, J. Vac. Sci. and Technol. B, 30(5), 051203, 2012.

2. Growth and fabrication of InAs/GaSb type-II superlattice mid-wavelength infrared photodetectors，J. Chen, Q.Xu, Y.Zhou, J.Jin, C.Lin and L.He, Nanoscale Research Letters; Vol.6,p.635, 2011.

3. A. Jang, R.W.Adams, J.X. Chen, W. O. Charles, C. Gmachl, L.W. Cheng, F.S. Choa, M.A. Belkin, Room temperature operation of 3.6μm InGaAs/InAlAs quantum cascade laser sources based on intracavity second harmonic generation, Appl. Phys. Lett., 97(14), 141103, 2010.

4. Chen J, Malis O, Sergent, A. M., Sivco, D. L.Weimann, N, Cho AY, In0.68Ga0.32As/Al0.64In0.36As/InP 4.5 μm quantum cascade lasers grown by solid phosphorus molecular beam epitaxy, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 25 (3): 913-915 MAY-JUN 2007.

5. J.X. Chen, A. Markus, A. Fiore, U. Oesterle, R. P. Stanley, J. F. Carlin, R. Houdre and M. Ilegems, Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm application, J. Appl. Phys. Vol. 91 (10), P. 6710, 2002.

6. J.X. Chen, U. Oesterle, A. Fiore, R.P. Stanley, M. Ilegems and T. Todaro, Matrix effects on the structural and optical properties of InAs quantum dots, Appl. Phys. Lett. Vol 79(22), P.3681, 2001.