Hydride vapor phase epitaxy of III-V semiconductors for photonic devices

Release Time：2024-05-17Number of visits：10

Speaker:  Yan-Ting Sun, KTH-Royal Institute of Technology.

Time:       2:00 pm, May 22nd

Location: SIST1D-106

Host:        Cheng Wang

Abstract:

Hydride vapor phase epitaxy (HVPE) is a near equilibrium crystal growth technology for III-V compound semiconductors, which has high growth rate and high selectivity. In this presentation I will introduce the application of III-V semiconductor HVPE in high power quantum cascade laser (QCL), III-V/Si photonic integration, III-V semiconductor nonlinear optical crystal and renewable energy.

Bio:

Dr. Yan-Ting Sun received Ph.D./Tekn. Dr. in Semiconductor Materials from KTH-Royal Institute of Technology in Sweden in 2003. From 2004 to 2011, he conducted research and development on the processing technology of high power semiconductor lasers, wavelength tunable lasers and avalanche photodiodes in industry. He joined KTH-Royal Institute of Technology in 2011 as Researcher. His research includes hydride vapor phase epitaxy (HVPE) growth of III-V compound semiconductor materials and photonic devices for the applications of optical communication and renewable energy.