AlScN Thin Film Suspended Piezoelectric Acoustic Devices

Release Time:2024-04-26Number of visits:10

Speaker:   Zhifang Luo

Time:        9:00, Apr.28

Location: SIST3-301

Host:        Tao Wu

Abstract:

Aluminum nitride (AlN) has high acoustic velocity, process compatibility and low temperature coefficient of frequency, which makes AlN suitable for the manufacture of acoustic resonators for radio frequency communications and piezoelectric ultrasonic transducers for sensing. However, the disadvantage of low piezoelectric coefficient of AlN is obvious. As a result, the electromechanical coupling coefficient of AlN-based piezoelectric devices is low, which limits the development of AlN-based devices. Therefore, researchers urgently need to find a solution that can retain the advantages of AlN materials as much as possible, but can improve its piezoelectric coefficient. In this talk, the fabrication process of AlScN suspended piezoelectric devices is developed. Then, Lamb Wave resonators (LWRs) based on AlScN are developed. In order to solve the decrease of device quality factor caused by Sc doping, high quality factor AlScN LWRs are designed and manufactured by reducing anchor loss and ohmic loss. Finally, the AlScN Lamb Wave humidity sensor with graphene oxide layer is further fabricated and tested, and its high sensing performance is demonstrated.

Bio:

Zhifang Luo received the B.S. degree in physics from ShanghaiTech University, Shanghai, China, in 2019, where he is currently pursuing the Ph.D. degree in electrical engineering. His research interests include the design and microfabrication techniques of piezoelectric microelectromechanical system (MEMS) resonators for RF and sensing applications.