Xinbo Zou
Assistant Professor
Graduated School:Ph.d., The Hong Kong University of Science and Technology
Tel: (021) 20685373
Office:Room 324, SIST Building No.3
Research Interests
Selected Publications


  • Wide bandgap Semiconductor Power Devices

  • GaN-based Microwave and Millimeter-wave Devices

  • Characterization of Deep-level Trap Properties


Dr. Xinbo Zou received his B.Eng degree in Electronic Science and Technology from Beijing University of Posts and Telecommunications (BUPT) in 2007. He received his Ph.D from the Hong Kong University of Science and Technology (HKUST) in 2013 for developing high-performance green and yellow LEDs on Si substrates with nanotechnology. From 2014 to 2017, he was a Research Assistant Professor with the Department of Electronic and Computer Engineering and a Junior Fellow in the Institute for Advanced Study (IAS) of HKUST. His main research interests include characterization of III-N materials and devices, from thin-film to nano-scale devices. Dr. Zou has authored more than 40 scientific papers. In September, 2017, he joined the School of Information Science and Technology (SIST) of ShanghaiTech University as a tenure-track assistant professor.


  1. Yuliang Zhang, Xu Zhang, Min Zhu, Jiaxiang Chen, Chak Wah Tang, Kei May Lau, Xinbo Zou, 'Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates', IEEE Transactions on Electron Devices (Early Access), DOI: 10.1109/TED.2020.3012422.

  2. Yangqian Wang, Yitian Gu, Xing Lu, Huaxing Jiang, Haowen Guo, Baile Chen, Kei May Lau, Xinbo Zou, 'Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K', IEEE Journal of the Electron Devices Society, Vol. 8, pp.850-856, 2020. DOI: 10.1109/JEDS.2020.3013656.

  3. Xinbo Zou, Xu Zhang, Yu Zhang, Qifeng Lyu, Chak Wah Tang, and Kei May Lau, 'GaN Single Nanowire p–i–n Diode for High-Temperature Operations', ACS Applied Electronic Materials, 2020 2 (3), 719-724, DOI: 10.1021/acsaelm.9b00801.

  4. Jiaxiang Chen, Min Zhu, Xing Lu, and Xinbo Zou, 'Electrical characterization of GaN Schottky barrier diode at cryogenic temperatures', Appl. Phys. Lett. 116, 062102 (2020), DOI: 10.1063/1.5131337.

  5. Yuliang Zhang, Xing Lu, Xinbo Zou, 'Device Design Assessment of GaN Merged P-i-N Schottky Diodes', Electronics 2019, 8(12), 1550. DOI: 10.3390/electronics8121550.

  6. Xu Zhang, Xinbo Zou, Xing Lu, Chak Wah Tang and Kei May Lau, “Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison”, IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 809-815, 2017.

  7. Xinbo Zou, Xu Zhang, Xing Lu, Chak Wah Tang, and Kei May Lau, 'Breakdown Ruggedness of Quasi-vertical GaN-based p-i-n Diodes on Si substrates', IEEE Electron Device Letters, Vol. 37, No. 9, pp. 1158-1161, Sept. 2016. DOI: 10.1109/LED.2016.2594821.

  8. Xinbo Zou, Xu Zhang, W. C. Chong, Chak Wah Tang, and Kei May Lau, 'Vertical LEDs on Rigid and Flexible Substrates using GaN-on-Si Epilayers and Au-free Bonding', IEEE Transactions on Electron Devices, Vol. 63, No. 4, pp. 1587-1593, April 2016. DOI: 10.1109/TED.2016.2526685.

  9. Xinbo Zou, Xu Zhang, Xing Lu, Chak Wah Tang, and Kei May Lau, 'Fully-vertical GaN p-i-n Diodes using GaN-on-Si Epilayers', IEEE Electron Device Letters, vol. 37, No. 5, pp. 636-639, May, 2016. DOI: 10.1109/LED.2016.2548488.