E-Beam Lithography of Elionix ELS-F125

Speak:     Dr. Feifei Yuan

Time:       1330-1400, Dec. 20

Location:  SIST 2-215

Host:       Prof. Tao Wu

Abstract:

Electron beam lithography (EBL) is a powerful technique for creating nano-scale structures that are too small to fabricate with conventional photolithography. Derived from the early scanning electron microscopes, the technique consists in scanning a beam of electrons across a surface covered with a resist film sensitive to those electrons, thus depositing energy in the desired pattern in the resist film.

The acceleration voltage of ELS-F125G8 is 125 kV. It is possible for high resolution nanolithography such as less than 8nm lithography capability due to less forward scattering and less back scattered affection. In addition, practically large beam current can reduce the writing time.

Process parameters/recipe and SEM results based on ELS-F125G8 will be introduced in this talk.

Bio:

Dr. Feifei Yuan received her Ph.D degree from Southeast University in 2017. From 2013 to 2017, she worked in the Leibniz Institute for Solid State and Materials Research Dresden (IFW, Germany) as an exchange student. Her focus was on the research of iron based superconducting thin films. She has joined ShanghaiTech University as a Process Engineer since 2018 and she is in charge of EBL and SEM equipment.

Sist seminar 18230