|Baile Chen, Assistant Professor|
Tel: (021) 20685596
III-V semiconductor materials and devices
High speed photodiodes
Dr. Baile Chen received his bachelor degree in physics from Department of Modern Physics in University of Science and Technology of China in Hefei, China, in 2007. He received his master degree in physics and Ph.D degree in electrical engineering both from University of Virginia, Charlottesville, VA, USA in 2009 and 2013, respectively. In February of 2013, he joined in Qorvo Inc in Oregon as RF product development engineer working on various RF power amplifiers and BAW filters for RF wireless communication systems. In January, 2016, He joined in the School of Information Science and Technology in Shanghai Tech University as a tenure track assistant professor. Currently, Dr. Baile Chen has published more than 20 journal papers as the first-author or corresponding author.
His research interests include III-V semiconductor materials and devices, SWIR/MWIR photodiodes and laser diodes, high speed/high power photodiodes, UV photodiodes and silicon photonics.
Yating Wan*#,Chen Shang#, Jian Huang#, Zhiyang Xie, AdityaJain, JustinNorman, Baile Chen*, ArthurGossard, JohnBowers, Low-dark current 1.55 μm InAs quantum dash waveguide photodiodes，Accepted by ACS Nano.
Baile Chen*#, Yating Wan#, Zhiyang Xie, Jian Huang, Chen Shang, Justin Norman, Qiang Li, , Yeyu Tong, Kei May Lau, Arthur C. Gossard, John E. Bowers, “Low dark current high gain InAs quantum dot avalanche photodetectors monolithically grown on Si”, Accepted by ACS Photonics.
Liqi Zhu, Jian Huang, Zongheng Xie, Zhuo Deng, Lu Chen, Chun Lin, and Baile Chen*, “Low frequency noise spectroscopy characterization of HgCdTe infrared detectors”, IEEE Transactions on Electron Devices, VOL. 67, NO. 2, 547-551, FEBRUARY 2020.
Yaojiang Chen#, Xuliang Chai#, Zhiyang Xie, Zhuo Deng, Ningtao Zhang, Yi Zhou*, Zhicheng Xu, Jianxin Chen, Baile Chen*, High-Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaAsSb Type-II Superlattice, IEEE Journal of Lightwave Technology, VOL. 38, Issue 4, 939-945, FEBRUARY 2020.
Yaojiang Chen, Zhiyang Xie, Jian Huang, Zhuo Deng, Baile Chen,* “High-speed uni-traveling carrier photodiode for 2 μm wavelength application”, Optica, 2019 6(7), 884-889.
Jian Huang#, Yating Wan#, Daehwan Jung, Justin Norman, Chen Shang, Qiang Li, Kei May Lau, Arthur C. Gossard, John E. Bowers, Baile Chen*， “Defect Characterization of InAs/InGaAs Quantum Dot p‐i‐n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate”, ACS Photonics, 2019 6 (5), 1100-1105.
Zhuo Deng#, Daqian Guo#,Jian Huang, Huiyun Liu, Jiang Wu*, Baile Chen*, Mid-wave infrared InAs/GaSb type-II superlattice photodetector with p-i-B-n deisgn grown on GaAs substrate , IEEE Journal of Quantum Electronics, vol. 55, no. 4, pp. 1-5, Aug. 2019, Art no. 4000205.
Jian Huang, Baile Chen*, Zhuo Deng, Yi Gu, Yingjie Ma, Jian Zhang, Xiren Chen, and Jun Shao, “ Deep levels analysis in wavelength extended InGaAsBi photodetector”, Semiconductor Science and Technology, 34 (2019) 095018.
Zhiyang Xie, Yaojiang Chen, Ningtao Zhang, and Baile Chen*, “InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength”, IEEE Photonics Technology Letters 31 (16), 1331-1334, 2019.
Zhuo Deng#, Daqian Guo#, Claudia González Burguete, Jian Huang, Zongheng Xie, Huiyun Liu, Jiang Wu*, and Baile Chen*, “ Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector “, Infrared Physics & Technology 101, 133-137, 2019.
Yaojiang Chen, Baile Chen*, Design of InP Based High Speed Photodiode for 2 μm Wavelength Application, IEEE Journal of Quantum Electronics, vol. 55, no. 1, pp. 1-8, Feb. 2019, Art no. 4400108.
Yaojiang Chen, Xuyi Zhao, Jian Huang, Zhuo Deng, Chunfang Cao, Qian Gong, Baile Chen*, “Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes”, Optics Express, Vol. 26, Issue 26, pp. 35034-35045 (2018).
Jian Huang#, Daqian Guo#, Zhuo Deng, Wei Chen, Huiyun Liu, Jiang Wu*, and Baile Chen*, “Mid-wave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate”, IEEE Journal of Lightwave Technology, VOL. 36, NO. 18, pp. 4033-4038, 2018.
Wei Chen#, Zhuo Deng#, Daqian Guo, Yaojiang Chen, Yuriy Mazur, Yurii Maidaniuk, Mourad Benamara, Gregory J Salamo, Huiyun Liu, Jiang Wu*, Baile Chen*, “Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-well Mid-wave Infrared Photodetectors Grown on Silicon Substrate”, IEEE Journal of Lightwave Technology, Vol 36, No 12, pp. 2572-2581, 2018.
Zhuo Deng, Baile Chen*, Xiren Chen, Jun Shao*, Qian Gong, Huiyun Liu, Jiang Wu*, “Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate”, Infrared Physics & Technology, Volume 90, Pages 115–121, 2018.
J Huang#, D Guo#, W Chen, Z Deng, Y Bai, T Wu, Y Chen, H Liu, J Wu*, Baile Chen*, Sub-monolayer quantum dot quantum cascade mid-infrared photodetector , Applied Physics Letters 111 (25), 251104, 2017.
Baile Chen*, “Optical gain analysis of GaAs-based InGaAs/GaAsSbBi type-II quantum wells lasers”, Optics Express Vol 25 (21), pp. 25183-25192, 2017.
Baile Chen*, “Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers,” IEEE Transactions on Electron Devices, vol. 64, pp. 1606-1611, 2017.