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Prof. Cheng Wang / 王成 助理教授、研究员

Tel:  (021) 20685263
Office: Room 1D-401E, SIST Building, No.393 Huaxia Middle Road, Pudong Area Shanghai
Major: EE
Cheng Wang Research Group Recruitment (Click Here)


  • Semiconductor optoelectronics
  • Novel semiconductor lasers
  • Nonlinear laser dynamics
  • Fiber-optic communications, Gas spectroscopies, and Lidar systems


Dr. Cheng Wang received the Ph.D. in Optoelectronics-Physics from Institut National des Sciences Appliquées de Rennes, France in 2015. During the Ph.D., he has researched with Télécom ParisTech, France, with Technische Universitat Berlin, Germany, and with Politecnico di Torino, Italy for two years. He was a Senior Research Assistant at the City University of Hong Kong from 2015 to 2016. He joined the School of Information Science and Technology at ShanghaiTech University as an assistant professor, PI in April, 2016. His main research interests are modeling and characterization of quantum structured semiconductor lasers including quantum dot lasers and quantum cascade lasers, nonlinear laser dynamics with control of optical injection and optical feedback, as well as the applications in fiber-optic communication networks, in gas spectroscopies, and in Lidar systems.


[1] C. Wang, J. -P. Zhuang, F. Grillot, and S. -C. Chan, "Contribution of off-resonant states to the phase noise of quantum dot lasers," Opt. Express 24, 29872 (2016). 
[2] C. Wang, K. Schires, M. Osiński, P. J. Poole, and F. Grillot, "Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking," Scientific Reports 6, 27825 (2016). 
[3] C. Wang, R. Raghunatahn, K. Schires, S. –C. Chan, L. F. Lester, and F. Grillot, “Optically injected InAs/GaAs quantum dot laser for tunable photonic microwave generation,” Opt. Lett. 41, 1153 (2016).
[4] C. Wang, M. E. Chabi, H. M. Huang, D. Erasme, P. J. Poole, J. Even, and F. Grillot, “Linewidth enhancement factor in nanostructure semiconductor lasers subject to optical injection,” Opt. Express 23, 21761 (2015).
[5] C. Wang, M. Osiński, J. Even, and F. Grillot, “Phase-amplitude coupling characteristics in directly modulated quantum dot lasers,” Appl. Phys. Lett. 105, 221114 (2014).
[6] C. Wang, B. Lingnau, K. Lüdge, J. Even, and F. Grillot, “Enhanced dynamic performance of quantum dot semiconductor lasers operating on the excited state,” IEEE J. Quantum Electron. 50, 723 (2014).
[7] C. Wang, F. Grillot, F. Y. Lin, I. Aldaya, T. Batte, C. Gosset, E. Decerle, and J. Even, “Nondegenerate four-wave mixing in a dual-mode injection-locked InAs/InP(100) nanostructure laser,” IEEE Photon. J. 6, 1500408 (2014).
[8] C. Wang, F. Grillot,V. I. Kovanis, J. D. Bodyfelt, and J. Even, “Modulation properties of optically injection-locked quantum cascade lasers,” Opt. Lett. 38, 1975 (2013).
[9] C. Wang, F. Grillot, V. Kovanis, and J. Even, “Rate equation analysis of injection-locked quantum cascade lasers,” J. Appl. Phys. 113, 063104 (2013).
[10] C. Wang, F. Grillot, and J. Even, “Impacts of wetting layer and excited state on the modulation response of quantum-dot lasers,” IEEE J. Quantum Electon. 4, 1144 (2012).