Visit ShanghaiTech University | 中文 | How to find us
HOME> People> Faculty
Prof. Baile Chen / 陈佰乐 助理教授、研究员

Tel:  (021) 20685596
Email: chenbl@@shanghaitech.edu.cn
Office: Room 1D-401C, SIST Building, No.393 Huaxia Middle Road, Pudong Area Shanghai
Major: EE
Website: http://sist.shanghaitech.edu.cn/faculty/chenbl/#about
Baile Chen Research Group Recruitment (Click Here)

RESEARCH INTERESTS

  • III-V semiconductor materials and devices
  • Short-wave/mid-wave infrared photodiodes/laser diodes
  • High speed, high power photodiodes
  • Wide band-gap semiconductors for UV light detection
  • Silicon photonics

BIOGRAPHY

Dr. Baile Chen received his bachelor degree in physics from Department of Modern Physics in University of Science and Technology of China in Hefei, China, in 2007. He received his master degree in physics and Ph.D degree in electrical engineering both from University of Virginia, Charlottesville, VA, USA in 2009 and 2013, respectively. In February of 2013, he joined in Qorvo Inc in Oregon as RF product development engineer working on various RF power amplifiers and BAW filters for RF wireless communication systems. In January, 2016, He joined in the School of Information Science and Technology in Shanghai Tech University as a tenure track assistant professor, PI.

SELECTED PUBLICATIONS

1. B. Chen, "Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers," IEEE Transactions on Electron Devices, vol. 64, pp. 1606-1611, 2017.
2. B. Chen and A. L. Holmes, "InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region," Optics letters, vol. 38, pp. 2750-2753, 2013.
3. B. Chen and L. H. Archie Jr, "Carrier dynamics in InP-based PIN photodiodes with InGaAs/GaAsSb type-II quantum wells," Journal of Physics D: Applied Physics, vol. 46, p. 315103, 2013.
4. B. Chen and A. Holmes Jr, "Optical gain modeling of InP based InGaAs (N)/GaAsSb type-II quantum wells laser for mid-infrared emission," Optical and Quantum Electronics, vol. 45, pp. 127-134, 2013.
5. B. Chen, J. Yuan, and A. Holmes, "Dark current modeling of InP based SWIR and MWIR InGaAs/GaAsSb type-II MQW photodiodes," Optical and Quantum Electronics, pp. 1-7, 2012.
6. B. Chen, W. Jiang, and A. Holmes Jr, "Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes," Optical and Quantum Electronics, vol. 44, pp. 103-109, 2012.
7. B. Chen, W. Jiang, J. Yuan, A. L. Holmes, and B. M. Onat, "SWIR/MWIR InP-based PIN photodiodes with InGaAs/GaAsSb type-II quantum wells," IEEE Journal of Quantum Electronics, vol. 47, pp. 1244-1250, 2011.
8. B. Chen, W. Jiang, J. Yuan, A. L. Holmes, and B. M. Onat, "Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 m," IEEE Photonics Technology Letters, vol. 23, pp. 218-220, 2011.
9. B. Chen, Q. Zhou, D. McIntosh, J. Yuan, Y. Chen, W. Sun, J. Campbell, and A. Holmes, "Natural lithography nano-sphere texturing as antireflective layer on InP-based pin photodiodes," Electronics letters, vol. 48, pp. 1340-1341, 2012.