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Research Fellow Zhuo Deng / 邓卓 Research Fellow

Tel: 
Email: dengzhuo@@shanghaitech.edu.cn
Office: Room 1B-401, SIST Building, No.393 Huaxia Middle Road, Pudong Area Shanghai
Research Group: Prof. Baile Chen Research Group

RESEARCH INTERESTS


  • Fabrication and characterization of infrared photodetectors based on III-V compound semiconductors 



BIOGRAPHY

Dr. Zhuo Deng obtained his B.Sc. degree in 2010 and Ph.D. degree in 2015, both from the Department of Physics at the University of Hong Kong. In July 2015, he joined GP Electronics (HK) Ltd. in Hong Kong as a research engineer and worked on the R&D of electroacoustic products. In October 2016, He joined the School of Information Science and Technology in ShanghaiTech University as a research fellow. His research interests include fabrication and characterization of infrared photodetectors based on III-V compound semiconductors.

SELECTED PUBLICATIONS

[1] Z. Deng, J. Ning, R. Wang, Z. Su, S. Xu, Z. Xing, S. Lu, J. Dong, H. Yang, Influence of temperature and reverse bias on photocurrent spectrum and supra-bandgap spectral response of monolithic GaInP/GaAs double-junction solar cell, Frontiers of Optoelectronics, 9 (2016) 306-311. 
[2] Z.C. Su, J.Q. Ning, Z. Deng, X.H. Wang, S.J. Xu, R.X. Wang, S.L. Lu, J.R. Dong, H. Yang, Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?, Nanoscale, 8 (2016) 7113-7118.
[3] Z. Deng, J.Q. Ning, Z.C. Su, S.J. Xu, Z. Xing, R.X. Wang, S.L. Lu, J.R. Dong, B.S. Zhang, H. Yang, Structural dependences of localization and recombination of photogenerated carriers in the top GaInP subcells of GaInP/GaAs double-junction tandem solar cells, ACS Applied Materials & Interfaces, 7 (2015) 690-695.
[4] Z. Deng, R.X. Wang, J.Q. Ning, C.C. Zheng, S.J. Xu, Z. Xing, S.L. Lu, J.R. Dong, B.S. Zhang, H. Yang, Super transverse diffusion of minority carriers in GaxIn1?xP/GaAs double-junction tandem solar cells, Solar Energy, 110 (2014) 214-220.
[5] J.Q. Ning, S.J. Xu, Z. Deng, Z.C. Su, Polarized and Non-polarized Photoluminescence of GaInP2 Alloy with Partial CuPt-type Atomic Ordering: Ordered Domains vs. Disordered Regions, Journal of Materials Chemistry C, 2 (2014) 6119-6124.
[6] Z. Deng, R.X. Wang, J.Q. Ning, C.C. Zheng, W. Bao, S.J. Xu, X.D. Zhang, S.L. Lu, J.R. Dong, B.S. Zhang, H. Yang, Radiative recombination of carriers in the GaxIn1?xP/GaAs double-junction tandem solar cells, Solar Energy Material and Solar Cells, 111 (2013) 102-106.