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Research Fellow Zhuo Deng / 邓卓 Research Fellow

Office: Room 1B-308, SIST Building, No.393 Huaxia Middle Road, Pudong Area Shanghai
Research Group: Prof. Baile Chen Research Group


  • Optical properties and carrier dynamics of III-V semiconductor bulk materials and nanostructures, e.g., InAs/GaSb, InGaAs/GaAs quantum wells, quantum wires and quantum dots
  • Design, fabrication and characterization of novel optoelectronic devices based on III-V semiconductor nanostructures


Dr. Zhuo Deng obtained his B.Sc. degree in 2010 and Ph.D. degree in 2015, both from the Department of Physics at the University of Hong Kong. In July 2015, he joined GP Electronics (HK) Ltd. in Hong Kong as a research engineer and worked on the R&D of electroacoustic products. In October 2016, He joined the School of Information Science and Technology in ShanghaiTech University as a research fellow. His research interests include optical properties of III-V compound semiconductors, as well as design, fabrication and characterization of optoelectronic devices based on III-V semiconductor nanostructures.


1.  Wei Chen*, Zhuo Deng* Daqian Guo, Yaojiang Chen, Yuriy I. Mazur, Yurii Maidaniuk, Gregory J. Salamo, Huiyun Liu, Jiang Wu, Baile Chen, Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-well Mid-wave Infrared Photodetectors Grown on Silicon Substrate, IEEE Journal of Lightwave Technology, accepted. (co-1st author)
2. Deng, Zhuo, Chen, Baile, Chen, Xiren, Shao, J, Gong, Qian, Huiyun, Liu, Wu, Jiang, Optical properties of beryllium-doped GaSb layers grown on GaAs substrate, Infrared Physics & Technology, 90 (2018) 115-121.
3. Jian Huang, Daqian Guo, Wei Chen, Zhuo Deng, Yinghao Bai, Tinghui Wu, Yaojiang Chen, Huiyun Liu, Jiang Wu, Baile Chen, Sub-monolayer quantum dot quantum cascade mid- infrared photodetector, Applied Physics Letters, 111 (2017) 251104.
4. Z. Deng, J.Q. Ning, Z.C. Su, S.J. Xu, Z. Xing, R.X. Wang, S.L. Lu, J.R. Dong, B.S. Zhang, H. Yang, Structural dependences of localization and recombination of photogenerated carriers in the top GaInP subcells of GaInP/GaAs double-junction tandem solar cells, ACS Applied Materials & Interfaces, 7 (2015) 690-695.
5.  Z. Deng, R.X. Wang, J.Q. Ning, C.C. Zheng, S.J. Xu, Z. Xing, S.L. Lu, J.R. Dong, B.S. Zhang,
H. Yang, Super transverse diffusion of minority carriers in GaxIn1?xP/GaAs double-junction tandem solar cells, Solar Energy, 110 (2014) 214-220.