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III-V Quantum Dot Lasers Monolithcally Grown on Si Platform
Date: 2016/10/18             Browse: 652
Seminar Topic: III-V Quantum Dot Lasers Monolithcally Grown on Si Platform

Speaker: Jiang Wu
Time:      Oct. 18, 2:00 p.m. - 4:00 p.m.
Venue:    Room 402, Teaching Center (@Huanke Rd.) 

The ability to grow high-quality III-V materials directly on silicon substrates would enable the long-pursuit efficient light sources for the silicon photonics.  However, large material dissimilarity between III-Vs and silicon, especially polar versus nonpolar surfaces and lattice mismatch, makes the monolithic growth of III-Vs directly on silicon substrates highly challenging by introducing high-density antiphase boundaries and threading dislocations.  Recently, III-V quantum dot devices have received much attention for integrated III-V/Si photonics due to their unique properties, in particular reduced sensitivity to defects and delta-function density of states.  Here, recent advances at UCL in fabricating high-quality GaAs epilayers and InAs/GaAs quantum dot lasers directly grown on silicon substrates are introduced. 

Dr. Jiang Wu is a Lecturer in the Department of Electronic and Electrical Engineering at UCL. Dr. Wu received the PhD in Electrical Engineering from the University of Arkansas in 2011. He joined the Photonics group at University College London as a Research Associate in 2012. His current research interests include Molecular Beam Epitaxy of III-V semiconductors and optoelectronic devices. He has co-authored over 100 technical papers in the field of semiconductors and optoelectronics with H-index of 21 (Google Scholar). He is a member of IEEE.  He has served on the Editorial Board of Nanoscale Research Letters as the Managing Editor. 

Seminar 16075