• / 龚谦 特聘教授
    邮箱: qgong@@mail.sim.ac.cn
    电话:
    办公室:
    专业方向: 计算机科学与技术
龚谦 特聘教授

电 话:
Email :qgong@@mail.sim.ac.cn
办公室:
个人主页:http://people.ucas.ac.cn/~0006068
专业方向: 计算机科学与技术
单位: 上海微系统所


研究领域

  • 半导体激光器

  • 半导体低维结构材料和器件

  • 分子束外延技术


个人简历

龚谦,研究员,博士生导师。1993年毕业于北京师范大学物理系获固体物理专业获学士学位。1998年毕业于中国科学院半导体研究所,获半导体材料与器件专业博士学位。在XSTM的实验结果基础上,对量子点的形成机制提出了理论模型和解释。提出并验证了利用亚原子层厚GaAs或InP材料在1.55微米波段连续调节InAs量子点发光波长的方法。在半导体单模激光器方面开展了广泛研究,成功研制了室温工作的GaAs和InP基量子点外腔激光器。成功研制了室温连续工作的Ge基InAs量子点激光器和GaSb基InGaAsSb量子阱激光器。他在国际学术期刊上发表论文100多篇,被引用1000多次,H-index 17。


代表性论文

1.Peng Wang, Qimiao Chen, Xiaoyan Wu, Chunfang Cao, Shumin Wang, and Qian Gong, 'Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure', Nanoscale Research Letters 11, 119(2016).
2.J. Y. Yan, Q. Gong, J. J. Gao, C. F. Cao, Y. Wang, H. X. Xu, W. P. Zhao, H. L. Wang, “Analysis of mode-hop free tuning of folded cavity grating feedback lasers”, Appl. Opt. 54, 8339(2015).
3.Q. M. Chen, Y. Song, K. Wang, L. Yue, P. Lu, Y. Li, Q. Gong, and S. Wang, “A new route toward light emission from Ge: tensile-strained quantum dots,” Nanoscale 7, 8725(2015).
4.S. M. Wang, Q. Gong, Y. Y. Li, C. F. Cao, H. F. Zhou, J. Y. Yan, Q. B. Liu, L. Y. Zhang, G. Q. Ding, Z. F. Di, and X. M. Xie, 'A novel semiconductor compatible path for nano-graphene synthesis using CBr4 precursor and Ga catalyst', Scientific Reports 4, 4653(2014)
5.P. Chen, Q. Gong, C. F. Cao, S. G. Li, Y. Wang, Q. B. Liu, L. Yue, Y. G. Zhang, S. L. Feng, C. H. Ma and H. L. Wang, “High performance external cavity InAs/InP quantum dot lasers”, Appl. Phys. Lett. 98, 121102(2011).
6.Q. Gong, P. Chen, S. G. Li, Y. F. Lao, C. F. Cao, C. F. Xu, Y. G. Zhang, S. L. Feng, C. H. Ma, and H. L. Wang, “Quantum dot lasers grown by gas-source molecular-beam epitaxy”, J. Cryst. Growth 323, 450(2011).
7.S. G. Li, Q. Gong, Y. F. Lao, Y. G. Zhang, S. L. Feng, and H. L. Wang, “InAs/InP(100) quantum dot laser with high wavelength stability”, Electron. Lett. 46, 158(2010).
8.S. G. Li, Q. Gong, Y. F. Lao, H. D. Yang, S. Gao, P. Chen, Y. G. Zhang, S. L. Feng, and H. L. Wang, “Two-color quantum dot laser with tunable wavelength gap”, Appl. Phys. Lett. 95, 251111(2009).
9.S. G. Li, Q. Gong, Y. F. Lao, K. He, J. Li, Y. G. Zhang, S. L. Feng, and H. L. Wang, “Room temperature continuous-wave operation of InAs/InP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy, Appl. Phys. Lett. 93, 111109(2008).
10.Q. Gong, P. Offermans, R. Noetzel, P.M. Koenraad, and J. H. Wolter, “Capping process of the InAs/GaAs quantum dots studied by cross-sectional scanning tunneling microscopy”, Appl. Phys. Lett. 85, 5697(2004). 
11.Q. Gong, R. Noetzel, P.J. van Veldhoven, T. J. Ejkemans, and J. H. Wolter, “InAs/InP quantum dots emitting in the 1.55 um wavelength region by inserting submonolayer GaP interlayers”, Appl. Phys. Lett. 85, 1404 (2004). 
12.Q. Gong, R. Noetzel, P. J. van Veldhoven, T. J. Ejkemans, and J. H. Wolter, “Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy”, Appl. Phys. Lett. 84, 275(2004). 
13.Q. Gong, R. Noetzel, G. J. Hamhuis, T. J. Ejkemans, and J. H. Wolter, “Self-organized strain engineering on GaAs (311)B: Template formaton for quantum dot nucleation control”, Appl. Phys. Lett. 81, 3254(2002).
14.Q. Gong, R. Noetzel, G. J. Hamhuis, T. J. Ejkemans, and J. H. Wolter, “Leveling and rebuilding: An approach to improve the uniformity of (In,Ga)As quantum dots”, Appl. Phys. Lett. 81, 1887(2002). 
15.Q. Gong, R. Noetzel, H.-P. Schoenherr, and K. H. Ploog, “Stable nonplanar surface formed on patterned (311)A GaAs substrate by molecular-beam epitaxy”, Appl. Phys. Lett. 77, 3538(2000). 
16.Q. Gong, J. B. Liang, et. al., “Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy”, J. Cryst. Growth 192, 376(1998).