• / 陈佰乐 助理教授、研究员
    邮箱: chenbl@@shanghaitech.edu.cn
    电话:(021) 20685596
    办公室: 信息学院1D-401C室
    专业方向: 电子科学与技术

陈佰乐 助理教授、研究员

电 话:(021) 20685596
Email :chenbl@@shanghaitech.edu.cn
办公室:信息学院1D-401C室
个人主页: http://faculty.sist.shanghaitech.edu.cn/faculty/chenbl/#about
专业方向: 电子科学与技术
陈佰乐 研究组招聘广告(点击进入)

研究领域

-雪崩光电二极管、单光子探测器

-高速、高功率光电二极管

-硅基光电子器件

-下一代光通信器件


个人简历

陈佰乐于2007年本科毕业中国科学技术大学近代物理系,并获得Panasonic育英奖学金,后赴美国弗吉尼亚大学深造。分别于2009年和2013年获得物理学硕士学位和电子工程博士学位。随后加入位于美国俄勒冈的Qrovo总部任射频产品研发工程师,从事多种不同频段的功率放大器和体声波滤波器等无线通信元器件的研发和量产工作。他于2016年1月全职加入上海科技大学信息科学与技术学院,任助理教授(终身教授序列)、研究员、博士生导师。陈佰乐博士至今发表论文30余篇,其中以第一作者或者通讯作者发表于IEEE Journal of Lightwave Technology, IEEE Journal of Quantum Electronics, IEEE Photonics Technology Letter, IEEE Transactions on Electron Devices, Applied Physics Letters, Optics Letters, Optics Express等期刊。此外,陈佰乐博士主要负责半导体器件物理和光电器件等本科生和研究生课程。


代表性论文

1.Yaojiang Chen, Baile Chen*, Design of InP Based High Speed Photodiode for 2 μm Wavelength Application, IEEE Journal of Quantum Electronics, Vol 55, No 1, pp. 1-8, 2019

2.Yaojiang Chen, Xuyi Zhao, Jian Huang, Zhuo Deng, Chunfang Cao, Qian Gong, Baile Chen*, “Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes”, Optics Express, Vol. 26, Issue 26, pp. 35034-35045 (2018)

3.Jian Huang, Daqian Guo, Zhuo Deng, Wei Chen, Huiyun Liu, Jiang Wu, and Baile Chen*, “Mid-wave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate”, IEEE Journal of Lightwave Technology, VOL. 36, NO. 18, pp. 4033-4038, 2018

4.Wei Chen, Zhuo Deng, Daqian Guo, Yaojiang Chen, Yuriy Mazur, Yurii Maidaniuk, Mourad Benamara, Gregory J Salamo, Huiyun Liu, Jiang Wu, Baile Chen*, “Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-well Mid-wave Infrared Photodetectors Grown on Silicon Substrate”, IEEE Journal of Lightwave Technology, Vol 36, No 12, pp. 2572-2581, 2018

5.Zhuo Deng, Baile Chen*, Xiren Chen, Jun Shao, Qian Gong, Huiyun Liu, Jiang Wu, “Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate”, Infrared Physics & Technology, Volume 90, Pages 115–121, 2018

6.Claudia González Burguete, Daqian Guo, Pamela Jurczak, Fan Cui, Mingchu Tang, Wei Chen, Zhuo Deng, Yaojiang Chen, Marina Gutiérrez, Baile Chen, Huiyun Liu, Jiang Wu, “Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates”, IET Optoelectronics 12 (1), 2-4, 2018

7.J Huang, D Guo, W Chen, Z Deng, Y Bai, T Wu, Y Chen, H Liu, J Wu, Baile Chen*, Sub-monolayer quantum dot quantum cascade mid-infrared photodetector , Applied Physics Letters 111 (25), 251104, 2017

8.Baile Chen*, “Optical gain analysis of GaAs-based InGaAs/GaAsSbBi type-II quantum wells lasers”, Optics Express Vol 25 (21), pp. 25183-25192, 2017

9.Baile Chen*, “Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers,” IEEE Transactions on Electron Devices, vol. 64, pp. 1606-1611, 2017.

10.Baile Chen*, A. L. Holmes Jr “InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region” Optics Letters, Vol. 38, Issue 15, pp. 2750-2753 (2013)

11.Baile Chen, W.Y. Jiang, Jinrong Yuan, A. L. Holmes Jr, Bora. M. Onat “SWIR/MWIR InP-based PIN Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells” IEEE QUANTUM ELECTRONICS, VOL. 47, ISSUE 9, September, 2011, 1244-1250

12.Baile Chen, W.Y. Jiang, Jinrong Yuan, A. L. Holmes Jr, Bora. M. Onat.“Demonstration of a Room Temperature InP-based Photodetector Operating beyond 3 μm”, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 23, NO. 4, FEBRUARY 15, 2011, 218-220

13.Baile Chen, A. L. Holmes Jr “Carrier Dynamics Study of InP-based PIN Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells” J. Phys. D: Appl. Phys Vol 46 (31), 315103, 2013