• / 陈佰乐 助理教授、研究员
    邮箱: chenbl@@shanghaitech.edu.cn
    电话:(021) 20685596
    办公室: 信息学院1D-401C室
    专业方向: 电子科学与技术

陈佰乐 助理教授、研究员

电 话:(021) 20685596
邮 箱:chenbl@@shanghaitech.edu.cn
办公室:信息学院1D-401C室
个人主页: http://faculty.sist.shanghaitech.edu.cn/faculty/chenbl/#about
专业方向: 电子科学与技术
博士毕业院校: 美国弗吉尼亚大学
陈佰乐 研究组招聘广告(点击进入)

研究领域

  • 雪崩光电二极管

  • 高速光电探测器

  • 子器件

  • 下一代光通信器件


个人简历

陈佰乐于2007年本科毕业中国科学技术大学近代物理系,后分别于2009年和2013年在美国弗吉尼亚大学获得物理学硕士学位和电子工程博士学位。随后他加入位于美国俄勒冈的Qrovo (前身为Triquint Semiconductor)总部任射频产品研发工程师,从事多种不同频段的功率放大器和体声波滤波器等无线通信元器件的研发和量产工作。在工业界从事多年之后,他于2016年1月全职加入上海科技大学信息科学与技术学院,任助理教授(终身教授序列)、研究员、博士生导师。2019年8月至2019年11月,他应邀在美国加州大学圣芭芭拉分校电子计算机工程系(John Bowers教授组)访问。他现为IEEE Access的副主编,同时也是国际电气与电子工程师协会和美国光学协会的会员。

目前陈佰乐博士主持科技部国家重点研发计划(光电子微电子专项)子课题,国家自然科学基金面上项目,上海市青年扬帆计划,以及多项中科院重点实验室项目。陈佰乐博士至今发表论文40余篇,其中27篇论文以第一作者或者通讯作者发表于Optica, ACS Photonics, ACS Nano, IEEE Journal of Lightwave Technology, IEEE Journal of Quantum Electronics, IEEE Photonics Technology Letter, IEEE Transactions on Electron Devices, Applied Physics Letters, Optics Letters, Optics Express等国际知名期刊。此外,陈佰乐博士主要负责半导体器件物理和光电器件等本科生和研究生课程。


代表性论文(通讯作者带*)

  1. Yating Wan*#,Chen Shang#, Jian Huang#, Zhiyang Xie, AdityaJain, JustinNorman, Baile Chen*, ArthurGossard, JohnBowers, Low-dark current 1.55 μm InAs quantum dash waveguide photodiodes,Accepted by ACS Nano.

  2. Baile Chen*#, Yating Wan#, Zhiyang Xie, Jian Huang, Chen Shang, Justin Norman, Qiang Li, , Yeyu Tong, Kei May Lau, Arthur C. Gossard, John E. Bowers, “Low dark current high gain InAs quantum dot avalanche photodetectors monolithically grown on Si”, Accepted by ACS Photonics.

  3. Liqi Zhu, Jian Huang, Zongheng Xie, Zhuo Deng, Lu Chen, Chun Lin, and Baile Chen*, “Low frequency noise spectroscopy characterization of HgCdTe infrared detectors”, IEEE Transactions on Electron Devices, VOL. 67, NO. 2, 547-551, FEBRUARY 2020.

  4. Yaojiang Chen#, Xuliang Chai#, Zhiyang Xie, Zhuo Deng, Ningtao Zhang, Yi Zhou*, Zhicheng Xu, Jianxin Chen, Baile Chen*, High-Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaAsSb Type-II Superlattice, IEEE Journal of Lightwave Technology, VOL. 38, Issue 4, 939-945, FEBRUARY 2020.

  5. Yaojiang Chen, Zhiyang Xie, Jian Huang, Zhuo Deng, Baile Chen,* “High-speed uni-traveling carrier photodiode for 2 μm wavelength application”, Optica, 2019 6(7), 884-889.

  6. Jian Huang#, Yating Wan#, Daehwan Jung, Justin Norman, Chen Shang, Qiang Li, Kei May Lau, Arthur C. Gossard, John E. Bowers, Baile Chen*, “Defect Characterization of InAs/InGaAs Quantum Dot p‐i‐n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate”, ACS Photonics, 2019 6 (5), 1100-1105.

  7. Zhuo Deng#, Daqian Guo#,Jian Huang, Huiyun Liu, Jiang Wu*, Baile Chen*, Mid-wave infrared InAs/GaSb type-II superlattice photodetector with p-i-B-n deisgn grown on GaAs substrate , IEEE Journal of Quantum Electronics, vol. 55, no. 4, pp. 1-5, Aug. 2019, Art no. 4000205.

  8. Jian Huang, Baile Chen*, Zhuo Deng, Yi Gu, Yingjie Ma, Jian Zhang, Xiren Chen, and Jun Shao, “ Deep levels analysis in wavelength extended InGaAsBi photodetector”, Semiconductor Science and Technology, 34 (2019) 095018.

  9. Zhiyang Xie, Yaojiang Chen, Ningtao Zhang, and Baile Chen*, “InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength”, IEEE Photonics Technology Letters 31 (16), 1331-1334, 2019.

  10. Zhuo Deng#, Daqian Guo#, Claudia González Burguete, Jian Huang, Zongheng Xie, Huiyun Liu, Jiang Wu*, and Baile Chen*, “ Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector “, Infrared Physics & Technology 101, 133-137, 2019.

  11. Yaojiang Chen, Baile Chen*, Design of InP Based High Speed Photodiode for 2 μm Wavelength Application, IEEE Journal of Quantum Electronics, vol. 55, no. 1, pp. 1-8, Feb. 2019, Art no. 4400108.

  12. Yaojiang Chen, Xuyi Zhao, Jian Huang, Zhuo Deng, Chunfang Cao, Qian Gong, Baile Chen*, “Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes”, Optics Express, Vol. 26, Issue 26, pp. 35034-35045 (2018).

  13. Jian Huang#, Daqian Guo#, Zhuo Deng, Wei Chen, Huiyun Liu, Jiang Wu*, and Baile Chen*, “Mid-wave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate”, IEEE Journal of Lightwave Technology, VOL. 36, NO. 18, pp. 4033-4038, 2018.

  14. Wei Chen#, Zhuo Deng#, Daqian Guo, Yaojiang Chen, Yuriy Mazur, Yurii Maidaniuk, Mourad Benamara, Gregory J Salamo, Huiyun Liu, Jiang Wu*, Baile Chen*, “Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-well Mid-wave Infrared Photodetectors Grown on Silicon Substrate”, IEEE Journal of Lightwave Technology, Vol 36, No 12, pp. 2572-2581, 2018.

  15. Zhuo Deng, Baile Chen*, Xiren Chen, Jun Shao*, Qian Gong, Huiyun Liu, Jiang Wu*, “Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate”, Infrared Physics & Technology, Volume 90, Pages 115–121, 2018.

  16. J Huang#, D Guo#, W Chen, Z Deng, Y Bai, T Wu, Y Chen, H Liu, J Wu*, Baile Chen*, Sub-monolayer quantum dot quantum cascade mid-infrared photodetector , Applied Physics Letters 111 (25), 251104, 2017.

  17. Baile Chen*, “Optical gain analysis of GaAs-based InGaAs/GaAsSbBi type-II quantum wells lasers”, Optics Express Vol 25 (21), pp. 25183-25192, 2017.

  18. Baile Chen*, “Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers,” IEEE Transactions on Electron Devices, vol. 64, pp. 1606-1611, 2017.