• / Prof. Jianxin Chen / 陈建新 特聘教授
    电话:
    Email: jianxinchen@@mail.sitp.ac.cn
    办公室:
    专业方向: 电子科学与技术
Prof. Jianxin Chen / 陈建新 特聘教授

电 话:
Email :jianxinchen@@mail.sitp.ac.cn
办公室:
个人主页:
专业方向: 电子科学与技术

研究领域


  • 低维半导体微纳结构材料、物理及相关光电器件




个人简历


代表性论文

1. Studies on InAs/GaSb Superlattice Structural Properties by High Resolution X-ray Diffraction, Zhou Yi, Chen Jianxin, Xu Qingqing, and He Li, J. Vac. Sci. and Technol. B, 30(5), 051203, 2012.
2. Growth and fabrication of InAs/GaSb type-II superlattice mid-wavelength infrared photodetectors,J. Chen, Q.Xu, Y.Zhou, J.Jin, C.Lin and L.He, Nanoscale Research Letters; Vol.6,p.635, 2011.
3. A. Jang, R.W.Adams, J.X. Chen, W. O. Charles, C. Gmachl, L.W. Cheng, F.S. Choa, M.A. Belkin, Room temperature operation of 3.6μm InGaAs/InAlAs quantum cascade laser sources based on intracavity second harmonic generation, Appl. Phys. Lett., 97(14), 141103, 2010.
4. Chen J, Malis O, Sergent, A. M., Sivco, D. L.Weimann, N, Cho AY, In0.68Ga0.32As/Al0.64In0.36As/InP 4.5 μm quantum cascade lasers grown by solid phosphorus molecular beam epitaxy, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 25 (3): 913-915 MAY-JUN 2007.
5. J.X. Chen, A. Markus, A. Fiore, U. Oesterle, R. P. Stanley, J. F. Carlin, R. Houdre and M. Ilegems, Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm application, J. Appl. Phys. Vol. 91 (10), P. 6710, 2002.
6. J.X. Chen, U. Oesterle, A. Fiore, R.P. Stanley, M. Ilegems and T. Todaro, Matrix effects on the structural and optical properties of InAs quantum dots, Appl. Phys. Lett. Vol 79(22), P.3681, 2001.