• / Prof. Qian Gong / 龚谦 特聘教授
    电话:
    Email: qgong@@mail.sim.ac.cn
    办公室:
    专业方向: 计算机科学与技术
Prof. Qian Gong / 龚谦 特聘教授

电 话:
Email :qgong@@mail.sim.ac.cn
办公室:
个人主页:
专业方向: 计算机科学与技术

研究领域



  • 半导体激光器

  • 半导体低维结构材料和器件

  • 分子束外延技术



个人简历

龚谦于1993年毕业于北京师范大学物理系获固体物理专业学士学位。1998年毕业于中国科学院半导体研究所,获半导体材料与器件专业博士学位(硕博连读)。1999年至2001年,在德国柏林Paul-Drude研究所从事博士后研究工作,主要研究高指数晶面和图案衬底上的MBE生长机理。2001年至2004年,在荷兰Eindhoven理工大学COBRA研究所从事博士后研究,主要研究MBE和CBE中自组装量子点的生长机理及物理特性。2004年获得中国科学院“百人计划”资助,加入中国科学院上海微系统与信息技术研究所,任研究员。2017年8月加入上海科技大学信息科学与技术学院任特聘教授。他的研究兴趣包括半导体DFB激光器,外腔可调谐半导体激光器,和低维半导体材料的分子束外延生长。

代表性论文

1.Peng Wang, Qimiao Chen, Xiaoyan Wu, Chunfang Cao, Shumin Wang, and Qian Gong, "Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure", Nanoscale Research Letters 11, 119(2016).
2.J. Y. Yan, Q. Gong, J. J. Gao, C. F. Cao, Y. Wang, H. X. Xu, W. P. Zhao, H. L. Wang, “Analysis of mode-hop free tuning of folded cavity grating feedback lasers”, Appl. Opt. 54, 8339(2015).
3.Q. M. Chen, Y. Song, K. Wang, L. Yue, P. Lu, Y. Li, Q. Gong, and S. Wang, “A new route toward light emission from Ge: tensile-strained quantum dots,” Nanoscale 7, 8725(2015).
4.S. M. Wang, Q. Gong, Y. Y. Li, C. F. Cao, H. F. Zhou, J. Y. Yan, Q. B. Liu, L. Y. Zhang, G. Q. Ding, Z. F. Di, and X. M. Xie, "A novel semiconductor compatible path for nano-graphene synthesis using CBr4 precursor and Ga catalyst", Scientific Reports 4, 4653(2014)
5.P. Chen, Q. Gong, C. F. Cao, S. G. Li, Y. Wang, Q. B. Liu, L. Yue, Y. G. Zhang, S. L. Feng, C. H. Ma and H. L. Wang, “High performance external cavity InAs/InP quantum dot lasers”, Appl. Phys. Lett. 98, 121102(2011).
6.Q. Gong, P. Chen, S. G. Li, Y. F. Lao, C. F. Cao, C. F. Xu, Y. G. Zhang, S. L. Feng, C. H. Ma, and H. L. Wang, “Quantum dot lasers grown by gas-source molecular-beam epitaxy”, J. Cryst. Growth 323, 450(2011).
7.S. G. Li, Q. Gong, Y. F. Lao, Y. G. Zhang, S. L. Feng, and H. L. Wang, “InAs/InP(100) quantum dot laser with high wavelength stability”, Electron. Lett. 46, 158(2010).
8.S. G. Li, Q. Gong, Y. F. Lao, H. D. Yang, S. Gao, P. Chen, Y. G. Zhang, S. L. Feng, and H. L. Wang, “Two-color quantum dot laser with tunable wavelength gap”, Appl. Phys. Lett. 95, 251111(2009).
9.S. G. Li, Q. Gong, Y. F. Lao, K. He, J. Li, Y. G. Zhang, S. L. Feng, and H. L. Wang, “Room temperature continuous-wave operation of InAs/InP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy, Appl. Phys. Lett. 93, 111109(2008).
10.Q. Gong, P. Offermans, R. Noetzel, P.M. Koenraad, and J. H. Wolter, “Capping process of the InAs/GaAs quantum dots studied by cross-sectional scanning tunneling microscopy”, Appl. Phys. Lett. 85, 5697(2004). 
11.Q. Gong, R. Noetzel, P.J. van Veldhoven, T. J. Ejkemans, and J. H. Wolter, “InAs/InP quantum dots emitting in the 1.55 um wavelength region by inserting submonolayer GaP interlayers”, Appl. Phys. Lett. 85, 1404 (2004). 
12.Q. Gong, R. Noetzel, P. J. van Veldhoven, T. J. Ejkemans, and J. H. Wolter, “Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy”, Appl. Phys. Lett. 84, 275(2004). 
13.Q. Gong, R. Noetzel, G. J. Hamhuis, T. J. Ejkemans, and J. H. Wolter, “Self-organized strain engineering on GaAs (311)B: Template formaton for quantum dot nucleation control”, Appl. Phys. Lett. 81, 3254(2002).
14.Q. Gong, R. Noetzel, G. J. Hamhuis, T. J. Ejkemans, and J. H. Wolter, “Leveling and rebuilding: An approach to improve the uniformity of (In,Ga)As quantum dots”, Appl. Phys. Lett. 81, 1887(2002). 
15.Q. Gong, R. Noetzel, H.-P. Schoenherr, and K. H. Ploog, “Stable nonplanar surface formed on patterned (311)A GaAs substrate by molecular-beam epitaxy”, Appl. Phys. Lett. 77, 3538(2000). 
16.Q. Gong, J. B. Liang, et. al., “Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy”, J. Cryst. Growth 192, 376(1998).