• / Prof. Tao Wu / 吴涛 助理教授、研究员
    电话:(021) 20685357
    Email: wutao@@shanghaitech.edu.cn
    办公室: 上海市浦东新区华夏中路393号信息学院2-202D室
    专业方向: 电子科学与技术
Prof. Tao Wu / 吴涛 助理教授、研究员

电 话:(021) 20685357
Email :wutao@@shanghaitech.edu.cn
办公室:上海市浦东新区华夏中路393号信息学院2-202D室
个人主页: http://small.shanghaitech.edu.cn/
专业方向: 电子科学与技术
吴涛 研究组招聘广告(点击进入)

研究领域



  • 多铁态功能材料及传感器件

  • 微纳机电系统

  • 微纳加工与先进半导体制造工艺



个人简历

吴涛,上海科技大学助理教授研究员、博导。 2007年本科毕业于浙江大学,201112月博士毕业于美国加州大学洛杉矶分校。吴博士致力于多铁态信息功能材料和微纳器件加工的研究,原创性地发现了(011PMN-PT铁电材料的可逆可调应变迟滞效应,并研发出了多种基于磁电效应的可调控器件,取得了非常丰硕的原创性科研成果;毕业后曾供职于英特尔两年多,主要负责14/22纳米先进制程下利用原子层沉积工艺ALD调节晶体管阈值电压以及前端工艺集成;之后有幸受邀以博士后研究员身份加入微机电系统(MEMS)领域鼻祖之一的美国工程院院士Roger T. Howe研究组,负责领导由GoogleATAP资助的微型曲面单球体图像传感器微系统的研发,并成功研发出可以将硅基感光元件材料进行曲面化塑性的微纳加工工艺;随后在美国东北大学负责领导由美国国防部先进研究项目局DARPA资助的近零功耗微纳器件和传感系统的研发。截止20178月,已在包括Nature Microsystems & Nanoengineering ACS Nano Applied Physics Letter Journal of Applied PhysicsPhysicalReview LetterJournal of Micromechanics andMicroengineering等国际著名期刊上发表学术论文29篇(其中第一作者论文16篇),总引用次数超过1000次,H因子为16。同时多次受邀参加各种国际会议和学术交流活动,长期受邀担任Applied Physics Letters, Journalof Applied Physics Journal of Micromechanics andMicroengineering等多种国际知名期刊的审稿人,拥有2项美国发明专利。

吴博士的研究方向包括多铁态功能材料与传感器件,压电微纳机电系统,微纳加工与先进半导体制造工艺。研究方向涉及到多学科交叉,欢迎电信、电气、机电、微电子、物理、材料、化学等专业学生报考与加入。


代表性论文

1. T. Wu, G. Chen, C. Cassella, W. Z. Zhu, M. Assylbekova, M. Rinaldi, N. McGruer,”Design and Fabrication of AlN RF MEMS Switch for Near-Zero Power RF Wake-Up Receivers”, IEEE Sensors 2017, Glasgow, Oct. 29-Nov. 2, 2017.
2. T. Wu, G. Chen, Z. Qian, W. Zhu., M. Rinaldi and N. McGruer, "A MICROELECTROMECHANICAL ALN RESOSWITCH FOR RF RECEIVER APPLICATION", 19th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers 2017), Kaohsiung, 2017, pp. 2123-2126.
3. C. Cassella, G. Chen, T. Wu, Z. Qian and M. Rinaldi, "Low Impedance Array of Coupled CrossSectional Lame’ Mode Resonators with High Figure of Merit in Excess of 100", Proceedings of the 19th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers 2017), June 18-22 2017, Kaohsiung, Taiwan
4. T. Wu, S. S. Hamann, A. Ceballos, C.E. Chang, O. Solgaard and R. T. Howe, “Design and Fabrication Of Silicon Tessellated Structures For Monocentric Imagers”, (Nature Publishing Group) Microsystems & Nanoengineering, (2016) 2, 16019 
5. S. Cherepov, P. K. Amiri, J. G. Alzate, K. Wong, M. Lewis, P. Upadhyaya, J. Nath, M. Bao, A. Bur, T. Wu, G. P. Carman, A. Khitun, and K. L. Wang, "Electric-field-induced spin wave generation using multiferroic magnetoelectric cells," Appl. Phys. Lett., vol. 104, pp. 082403, 2014 
6. M. Buzzi, R. V. Chopdekar, J. L. Hockel, A. Bur, T. Wu, N. Pilet, P. Warnicke, G. P. Carman, L. J. Heyderman, and F. Nolting, "Single Domain Spin Manipulation by Electric Fields in Strain Coupled Artificial Multiferroic Nanostructures," Phys. Rev. Lett., vol. 111, pp. 027204, 2013.   
7. Tao Wu, Gregory P. Carman, "Ultra-low power electrically reconfigurable magnetoelectric microwave devices", J. Appl. Phys.,vol. 112, pp. 073915, 2012 
8. M.Q. Bao, G.D. Zhu, Kin L. Wong, J.L. Hockel, M. Lewis, J. Zhao, T. Wu, P. K. Amiri, and K. L. Wang, "Magneto-electric tuning of the phase of propagating spin waves", Appl. Phys. Lett., vol. 101, pp. 022409, 2012. 
9. Y.C. Che, A. Badmaev, A. Jooyaie, T. Wu, J.L. Zhang, Chuan Wang, K. Galatsis, H. A Enaya, and C.W. Zhou, "Self-Aligned T-gate High-Purity Semiconducting Carbon Nanotube RF Transistors Operated in Quasi Ballistic Transport and Quantum Capacitance Regime," ACS Nano, 6 (8), pp. 6936 – 6943, 2012 
10. J. L. Hockel, A. Bur, T. Wu, K. P. Wetzlar , G. P. Carman, "Electric field induced magnetization rotation in patterned Ni ring/ [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT, x≈0.32) heterostructures", Appl. Phys. Lett. vol. 100, pp. 022401, 2012 
11. T. Wu, M. Bao, A. Bur, H. K. D. Kim, K. P. Mohanchandra, C. S. Lynch, and G. P. Carman, "Electrical tuning of metastable dielectric constant of ferroelectric single crystals for low-power electronics," Appl. Phys. Lett., vol. 99, pp. 182903, 2011 
12. T. Wu, A. Bur, K. Wong, P. Zhao, C. S. Lynch, P. K. Amiri, K. L. Wang, and G. P. Carman, "Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices," Appl. Phys. Lett., vol. 98, pp. 262504, 2011 
13. F. Zhang, Y.-C. Perng, J. H. Choi, T. Wu, T.-K. Chung, G. P. Carman, C. Locke, S. Thomas, S. E. Saddow, J.P. Chang, “Atomic layer deposition of Pb(Zr,Ti)Ox on 4H-SiC for metal-ferroelectric-insulator-semiconductor diodes,” J. Appl. Phys., vol. 109, pp. 124109, 2011 
14. T. Wu, P. Zhao, M. Bao, A. Bur, J. L. Hockel, K. P. Mohanchandra, C. S. Lynch, and G. P. Carman, "Domain Engineered Switchable Strain States in Ferroelectric (011)  [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT, x≈0.32) Single Crystals,"  J. Appl. Phys., vol. 109, pp.124101, 2011 
15. A. Bur, T. Wu, J. L. Hockel , C.-J. Hsu, H. K.D. Kim, T.-K. Chung, K. Wong, K. L. Wang, and G. P. Carman, "Strain-induced magnetization change in patterned ferromagnetic nickel nanostructures," J. Appl. Phys., vol. 109, pp.123903, 2011 
16. T. Wu, A. Bur, P. Zhao, K. P. Mohanchandra, K. Wong, K. L. Wang, C. S. Lynch, and G. P. Carman, "Giant electric-field-induced reversible and permanent magnetization reorientation on magnetoelectric Ni/(011) [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x heterostructure," Appl. Phys. Lett., vol. 98, pp. 012504, 2011